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Samsung HBM3E ‘Shinebolt’ Memory with 9.8 Gbps Per

Samsung HBM3E ‘Shinebolt’ Memory with 9.8 Gbps Per Pin Speed Unveiled

Next-generation Samsung HBM3E Shinebolt DRAM was unveiled during the company’s Memory Tech Day 2023 this week. Designed for AI applications, this memory will improve total cost of ownership (TCO) and speed up AI-model training as well as inference in the data center. Boasting a blazing quick 9.8 gigabits-per-second (Gbps) per pin speed, this enables the memory to achieve transfer rates exceeding 1.2 terabytes-per-second (TBps).

©SHIRSENDU KARMAKAR
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